2001

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

250mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA, 5V

Frequency - Transition :

2GHz

Gain :

9.5dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-

Package / Case :

55BT

Power - Max :

5W

Product Status :

Obsolete

Supplier Device Package :

55BT

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

50V