G2K3N10L6
- Mfr.Part #
- G2K3N10L6
- Manufacturer
- Goford Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- N100V, 3A,RD<220M@10V,VTH1.0V~2.
- Stock
- 3000
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- Manufacturer :
- Goford Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 3A (Tc)
- Drain to Source Voltage (Vdss) :
- 100V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 4.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 536pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- SOT-23-6
- Power - Max :
- 1.67W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 220mOhm @ 2A, 10V
- Supplier Device Package :
- SOT-23-6L
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Datasheets
- G2K3N10L6