SSM6J214FE(TE85L,F

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.6A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.9 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

560 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

SOT-563, SOT-666

Power Dissipation (Max) :

500mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

50mOhm @ 3A, 10V

Supplier Device Package :

ES6

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.2V @ 1mA