TK31E60X,S1X

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

30.8A (Ta)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

Super Junction

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

65 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3000 pF @ 300 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

230W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

88mOhm @ 9.4A, 10V

Supplier Device Package :

TO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.5V @ 1.5mA