RFD3N08L

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3A (Tc)

Drain to Source Voltage (Vdss) :

80 V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation (Max) :

30W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

800mOhm @ 1.5A, 5V

Supplier Device Package :

I-PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

2.5V @ 250µA