SI4108DY-T1-GE3

Manufacturer :

Vishay Dale Thin Film

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

20.5A (Tc)

Drain to Source Voltage (Vdss) :

75 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

54 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2100 pF @ 38 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power Dissipation (Max) :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

9.8mOhm @ 13.8A, 10V

Supplier Device Package :

8-SOIC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

4V @ 250µA