GT30J341,Q

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

59 A

Current - Collector Pulsed (Icm) :

120 A

Gate Charge :

-

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Power - Max :

230 W

Product Status :

Active

Reverse Recovery Time (trr) :

50 ns

Supplier Device Package :

TO-3P(N)

Switching Energy :

800µJ (on), 600µJ (off)

Td (on/off) @ 25°C :

80ns/280ns

Test Condition :

300V, 30A, 24Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 30A

Voltage - Collector Emitter Breakdown (Max) :

600 V