GT30J121(Q)

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

30 A

Current - Collector Pulsed (Icm) :

60 A

Gate Charge :

-

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-3P-3, SC-65-3

Power - Max :

170 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-3P(N)

Switching Energy :

1mJ (on), 800µJ (off)

Td (on/off) @ 25°C :

90ns/300ns

Test Condition :

300V, 30A, 24Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.45V @ 15V, 30A

Voltage - Collector Emitter Breakdown (Max) :

600 V